 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-12UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB VDS= 10V dB A dB % Two-Tone Test Po=30.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 40.5 9.0 -44 TYP. MAX. 41.5 10.0 3.2 40 -47 3.2 3.8 0.6 3.8 80 f = 5.9 to 6.4GHz add IM3 dBc A C Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V IGS= -140A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 2500 -2.5 7.2 2.0 MAX. -4.0 2.4 uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 TIM5964-12UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C ) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 10.0 62.5 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM5964-12UL RF PERFORMANCE Output Power vs. Frequency 44 43 Po (dBm ) 42 41 40 39 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 Frequency (GHz) VDS= 10V IDS 3.2A Pin= 31.5dBm Output Power vs. Input Power 43 42 41 40 Po (dBm) 39 38 37 36 35 34 24 26 28 30 32 34 Pin ( dB m) A add f= 6.15GHz VDS= 10V IDS 3.2A 90 80 Po 70 60 50 40 30 20 10 0 Aadd (% ) 3 TIM5964-12UL Power Dissipation vs. Case Temperature 100 80 P T (W) 60 40 20 0 0 40 80 120 160 200 Tc (*Z ) IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS 3.2A f= 6.15GHz f= 5MHz - 30 IM3 (dBc) - 40 - 50 - 60 25 27 29 31 33 35 Po(dBm), Single Carrier Level 4 |
Price & Availability of TIM5964-12UL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |